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ZXM61P03F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
SYMBOL
V DSS
V GS
LIMIT
-30
20
UNIT
V
V
Continuous Drain Current
(V GS =-10V;
(V GS =-10V;
T A =25°C)(b)
T A =70°C)(b)
I D
-1.1
-0.9
A
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
I DM
I S
I SM
P D
P D
T j :T stg
-4.3
-0.88
-4.3
625
5
806
6.4
-55 to +150
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - OCTOBER 2005
2
SEMICONDUCTORS
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